Using the world's leading Quantum well intermixing (QWI) design technology, we independently design quantum well structures based on GaAs and InP to prepare single-mode lasers, DBR lasers and high-frequency mode-locked lasers.

The unique graded waveguide, wide waveguide or asymmetric waveguide structures are designed to improve the laser characteristics, reduce the threshold current density of quantum well lasers, increase the optical limiting factor, and improve the beam characteristics and end-optical power density. A reasonably designed limiting layer can further reduce the leakage current of some carriers injected into the active region through diffusion and drift through the boundary between the limiting layer and the waveguide layer. The matching design of quantum well and waveguide limiting layer structure can effectively improve the photoelectric conversion efficiency, reduce the internal loss and reduce the heat consumption.

High-quality epitaxial growth technology, using high-performance commercial MOCVD equipment, through the independent development of new epitaxial growth technology, precise control of epitaxial layer thickness, composition and doping level, strict control of material defects, preparation of high-quality GaAs and InP system epitaxial materials that meet the design. The epitaxial sheet products produced have excellent surface appearance, low defect density, high internal quantum efficiency and photoelectric conversion efficiency, and excellent reliability and life properties. Key parameters such as optical properties, uniformity, interface cleanliness, doping distribution, structural accuracy and defect density of the epitaxial materials were tested and characterized by PL, X-ray, ECV, SIMS and other analytical technologies, and the intracavity loss and internal quantum efficiency of the materials were analyzed to guide the growth of high-quality materials.

The non-injection zone near the end face of semiconductor laser can reduce the occurrence of non-radiative recombination. The non-pumping window design and preparation technology is developed to reduce the occurrence of end-face non-radiative recombination and increase the COD threshold of laser cavity surface. It has unique advantages in hardware facilities, technical strength and technical team. Has a set of international leading technology level of the process platform, self-opening wafer high alignment precision technology, stress-free etching technology, ultra-low ohmic contact resistance technology, online detection technology, fine process technology, to achieve high repeatability and stability of chip preparation, reduce the semiconductor laser in the production process caused by mechanical damage, Improve the yield of semiconductor laser and reduce the production cost of semiconductor laser.

The operating mode of the semiconductor laser puts higher requirements on the reliability of the cavity mask, and through the RGA upgrade of the key equipment, the composition and content of the residual gas during the coating process is monitored, and the unique P3 end treatment technology is independently developed. The laser surface cleaning, passivation and coating technology can significantly reduce the surface state density of the semiconductor laser surface, thus reducing the surface non-radiation recombination rate and increasing the COD threshold of the laser surface. Solve the problems of flatness, cleanliness and oxidation resistance of the cavity surface, optimize the cavity mask material and the reflectivity of the front and back cavity surface, achieve high power output and extend the product life. Greatly improve product performance and production capacity, is the core technology of mass production of high power laser